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| SPICE MODEL: SBM540 SBM540 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERMITEa3 Features * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Lead Free Finish, RoHS Compliant (Note 2) A P 3 E G POWERMITEa3 Dim A B Min 4.03 6.40 Max 4.09 6.61 Mechanical Data * * * * * * * * * Case: POWERMITEa3 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish). Polarity: See Diagram Marking: Type Number, See also Sheet 3 Ordering Information, See Sheet 3 Weight: 0.072 grams (approximate) Note: 1 2 B J H C D E G H .889 NOM 1.83 NOM 1.10 5.01 4.37 .71 .36 1.73 1.14 5.17 4.43 .77 .46 1.83 .178 NOM M D C PIN 1 PIN 2 PIN 3, BOTTOMSIDE HEAT SINK K C L J K L M P e3 .178 NOM Pins 1 & 2 must be electrically connected at the printed circuit board. All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (see also Figure 5) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load @ TC = 90C Typical Thermal Resistance Junction to Soldering Point Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJS Tj TSTG @ TA = 25C unless otherwise specified Symbol V(BR)R VFM Min 40 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 0.48 0.45 0.59 0.56 0.05 2.5 250 Max 3/4 0.52 3/4 3/4 3/4 0.5 20 3/4 Unit V V Test Condition IR = 0.5mA IF = 5A, TS = 25C IF = 5A, TS = 125C IF = 10A, TS = 25C IF = 10A, TS = 125C TS = 25C, VR = 40V TS = 100C, VR = 40V f = 1.0MHz, VR = 4.0V DC Value 40 28 5 100 3.2 -55 to +125 -55 to +150 Unit V V A A C/W C C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage Reverse Current (Note 1) Total Capacitance Notes: IRM CT mA pF 1. Short duration test pulse used to minimize self-heating effect. 2. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see EU Directive Annex Note 7. DS30297 Rev. 6 - 2 1 of 3 www.diodes.com SBM540 a Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 100 IR, INSTANTANEOUS REVERSE CURRENT (mA) 100 10 TJ = 125C 10 TJ = 100C 1.0 TJ = 100C 1.0 TJ = 25C TJ = 75C 0.1 0.1 0.01 TJ = 25C 0.01 0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 0.001 0 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 125 Single Half-Sine-Wave 1000 CT, TOTAL CAPACITANCE (pF) TC = 90C 100 Tj = 25C f = 1MHz 75 100 50 25 0 1 10 100 10 0.1 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Forward Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance vs. Reverse Voltage DS30297 Rev. 6 - 2 2 of 3 www.diodes.com SBM540 7.5 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 4 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 8 7 9 10 3 4 6 1 2 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation 5 dc IF, DC FORWARD CURRENT (A) 6.0 Note 3 4.5 Note 4 3.0 1.5 Note 5 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 DC Forward Current Derating Notes: 3. TA = TSOLDERING POINT, RqJS = 3.2C/W, RqSA = 0C/W. 4. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 15-30C/W. 5. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 60-75C/W. Ordering Information Device SBM540-13-F Notes: (Note 6) Packaging POWERMITEa3 Shipping 5000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information SBM540 YYWW(K) SBM540 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 WW = Week code 01 to 52 (K) = Factory Designator IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. POWERMITE is a registered trademark of Microsemi Corporation. DS30297 Rev. 6 - 2 3 of 3 www.diodes.com SBM540 |
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